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| ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075 ; ID=-3.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * * * * * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package MSOP8 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control S D D D D ORDERING INFORMATION DEVICE ZXM64P03XTA ZXM64P03XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units S G 3 DEVICE MARKING * ZXM4P03 PROVISIONAL ISSUE A - JULY 1999 145 4 Top View 5 67 S 2 1 8 ZXM64P03X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=4.5V; T A=25C)(b) (V GS=4.5V; T A=70C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25C (a) Linear Derating Factor Power Dissipation at T A=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j:T stg LIMIT -30 20 -3.8 -3.0 -19 -2.3 -19 1.1 8.8 1.8 14.4 -55 to +150 UNIT V V A A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 70 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - JULY 1999 146 ZXM64P03X CHARACTERISTICS Max Power Dissipation (Watts) 100 Refer Note (a) 2.0 -ID - Drain Current (A) 1.5 Refer Note (b) Refer Note (a) 10 1.0 1 DC 1s 100ms 10ms 1ms 100us 0.5 100m 0.1 1 10 100 0 0 20 40 60 80 100 120 140 160 -VDS - Drain-Source Voltage (V) T - Temperature (C) Safe Operating Area Derating Curve Thermal Resistance (C/W) 80 Refer Note (b) 120 Themal Resistance (C/W) Refer Note (a) 60 90 40 D=0.5 60 D=0.5 20 D=0.2 D=0.1 Single Pulse 30 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JULY 1999 147 ZXM64P03X ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 30.2 27.8 -0.95 V ns nC T j=25C, I S=-2.4A, V GS=0V T j=25C, I F=-2.4A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 4.4 6.2 40 29.2 46 9 11.5 ns ns ns ns nC nC nC V DS=-24V,V GS=-10V, I D =-2.4A (Refer to test circuit) V DD =-15V, I D=-2.4A R G=6.2, R D=6.2 (Refer to test circuit) C iss C oss C rss 825 250 80 pF pF pF V DS=-25 V, V GS=0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 2.3 -1.0 0.075 0.100 -30 -1 100 V A nA V S I D=-250A, V GS=0V V DS=-30V, V GS=0V V GS= 20V, V DS=0V I D =-250A, V DS= V GS V GS=-10V, I D=-2.4A V GS=-4.5V, I D=-1.2A V DS=-10V,I D=-1.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 1999 148 ZXM64P03X TYPICAL CHARACTERISTICS 100 +25C 100 +150C 10V 8V 6V 5V -VGS 4.5V -ID - Drain Current (A) -ID - Drain Current (A) 10V 8V 6V 10 4V 3.5V 10 -VGS 5V 4.5V 4V 3.5V 3V 3V 1 1 2.5V 100m 0.1 1 10 100 100m 0.1 1 10 100 -VDS - Drain-Source Voltage (V) -VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 100 Normalised RDS(on) and VGS(th) 1.7 RDS(on) -ID - Drain Current (A) T=+25C 1.5 1.3 1.1 0.9 0.7 0.5 -100 VGS(th) VGS=VDS ID=-250uA VGS=-10V ID=-2.4A 10 T=+150C 1 VDS=-10V 100m 2.5 3 3.5 4 4.5 5 5.5 6 0 +100 +200 -VGS - Gate-Source Voltage (V) Tj - Junction Temperature (C) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance () Normalised RDS(on) and VGS(th) v Temperature -ISD - Reverse Drain Current (A) 100 1 Vgs=-3V 10 Vgs=-4.5V 100m 1 T=+150 C T=+25 C Vgs=-10V 100m 10m 0.1 1 10 100 10m 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JULY 1999 149 ZXM64P03X TYPICAL CHARACTERISTICS 1600 Vgs=0V -VGS - Gate-Source Voltage (V) 14 ID=-2.4A C - Capacitance (pF) f=1MHz 1200 Ciss Coss Crss 12 10 8 6 4 2 0 0 10 20 30 40 VDS=-24V VDS=-15V 800 400 0 0.1 1 10 100 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JULY 1999 150 ZXM64P03X PACKAGE DIMENSIONS D DIM Millimetres MIN MAX 1.10 0.05 0.25 0.13 2.90 0.65 2.90 4.90 0.40 0 0.15 0.40 0.23 3.10 BSC 3.10 BSC 0.70 6 Inches MIN MAX 0.043 0.002 0.010 0.005 0.114 0.0256 0.114 0.193 0.016 0 0.006 0.016 0.009 0.122 BSC 0.122 BSC 0.028 6 A 8 7 65 A1 E H 1 2 34 B C eX6 D e A1 E B C L A H L q Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999 152 |
Price & Availability of ZXM64P03X
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